STMICROELECTRONICS (Reliability characterization of Flash memory arrays)
Collaboration with industry
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Start date: 2005-01-01
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Project abstract
Reliability represents today the main constraint to the scaling of Flash non-volatile memories.
The research activity is focused on the analysis of the mechanisms limiting the reliability of ultra-scaled Flash memories and on the investigation of the operating conditions for the development of optimized technologies.
Anomalous charge loss from the floating-gate is characterized by novel experimental techniques and studied using advanced numerical models.
The project is based on a long term collaboration.
The research activity is now focused on the investigation of the threshold voltage instability due to single-electron trapping phenomena in the tunnel oxide of the memory cell and on its statistical characterization.
The research activity is focused on the analysis of the mechanisms limiting the reliability of ultra-scaled Flash memories and on the investigation of the operating conditions for the development of optimized technologies.
Anomalous charge loss from the floating-gate is characterized by novel experimental techniques and studied using advanced numerical models.
The project is based on a long term collaboration.
The research activity is now focused on the investigation of the threshold voltage instability due to single-electron trapping phenomena in the tunnel oxide of the memory cell and on its statistical characterization.
Project results
- R. Gusmeroli, C. Monzio Compagnoni, A. Riva, A.S. Spinelli, A.L. Lacaita, M. Bonanomi, and A. Visconti, “Defects spectroscopy in SiO2 by statistical random telegraph noise analysis”, in IEDM Tech. Dig., pp.483-486, 2006.
- D. Ielmini, A.S. Spinelli, and A. Visconti, “Characterization of oxide trap energy by analysis of the SILC roll-off regime in Flash memories”, IEEE Trans. Electron Devices, vol.53, pp. 126-134, 2006.
- D. Ielmini, A. Ghetti, A.S. Spinelli, and A. Visconti, “A study of hot-hole injection during programming drain disturb in Flash memories”, IEEE Trans. Electron Devices, vol.53, pp. 668-676, 2006.
- D. Ielmini, A. S. Spinelli and A. L. Lacaita, “Recent developments on Flash memory reliability”, Microelectron. Eng. 80C, 321-328, 2005.
- D. Ielmini, A. S. Spinelli, A. L. Lacaita, L. Chiavarone and A. Visconti, “A new charge-trapping technique to extract SILC-trap time constants in SiO2”, in IEDM Tech. Dig., IEEE Inc., Piscataway, NJ, 551-554 (2005). ISBN 0-7803-9268-X.
Patent:
A. Visconti, M. Bonanomi, D. Ielmini, A. S. Spinelli, “Method for programming/erasing a non volatile memory cell device, in particular for Flash type memories”. Domanda di brevetto congiunta STMicroelectronics-Politecnico di Milano depositata in data 10/3/06.
