Ambrogio, Balatti and Ielmini won the IEEE Paul Rappaport Award 2015
July 4th, 2016
Abstract
A team led by Prof. Daniele Ielmini and including coauthors Stefano Ambrogio and Simone Balatti from DEIB and Vincent McCaffrey and Daniel Wang from Adesto Technologies, USA, won the prestigious IEEE Paul Rappaport Award 2015 for the papers ‘Noise-Induced Resistance Broadening in Resistive Switching Memory—Part I: Intrinsic Cell Behavior’ and ‘Part II: Array Statistics’. The papers were selected from over 630 articles that were published during 2015 in the IEEE Trans. Electron Devices, the main journal of the IEEE Electron Devices Society (EDS).
The award will be presented at the IEEE International Electron Devices Meeting (IEDM), Dec. 2016, San Francisco, CA. It is the first time that the Rappaport Award, first issued in 1984, is won by an Italian group.
Further information is available at:
Paul Rappaport Award http://eds.ieee.org/paul-rappaport-award.html
Paper Part I http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7283598
Paper Part II http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7283593
The award will be presented at the IEEE International Electron Devices Meeting (IEDM), Dec. 2016, San Francisco, CA. It is the first time that the Rappaport Award, first issued in 1984, is won by an Italian group.
Further information is available at:
Paul Rappaport Award http://eds.ieee.org/paul-rappaport-award.html
Paper Part I http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7283598
Paper Part II http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7283593