Reliability represents today the main constraint to the scaling of Flash non-volatile memories. The research activity is focused on the analysis of the mechanisms limiting the reliability of ultra-scaled Flash memories and on the investigation of the operating conditions for the development of optimized technologies. Anomalous charge loss from the floating-gate is characterized by novel experimental techniques and studied using advanced numerical models.
The project is based on a long term collaboration. The research activity is now focused on the investigation of the threshold voltage instability due to single-electron trapping phenomena in the tunnel oxide of the memory cell and on its statistical characterization.