Simone Balatti was born in Chiavenna, Italy, in 1987. He received the B.S. and M.S. degrees in electronic engineering from the Politecnico di Milano, Milano, in 2009 and 2011, respectively. For his bachelor thesis he studied the performances of programming and erasing of TANOS memory and for master thesis he worked on resistive switching effects in oxide based memories (RRAM). He is currently working with the Dipartimento di Elettronica ed Informazione, Politecnico di Milano, as Ph.D. student in information technology engineering and as Teaching Assistant. His research activities mainly involve characterization and modelling of electrical and physical properties in resistive switching and conductive bridge memories.
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