Fabio Acerbi was born in 1984 in Carpi (MO), Italy.
In 2008 he graduated summa cum laude in Electronics Engineering at Politecnico di Milano, with a thesis work titled “Design and Simulation of InGaAs/InP Avalanche Photodiodes for Single Photon Detection”.
Since 2009 he is a Ph.D. student of Dipartimento di Elettronica e Informazione (DEI), Politecnico di Milano. He’s current research activity is focused on design and characterization of innovative Single Photon Avalanche Diodes (SPADs), made of Indium and gallium arsenide – indium phosphide (InGaAs/InP), for biomedical, telecommunications and IC testing application, where high detection efficiency in the near-infrared spectral range is needed.
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