Large-area Si-integrated BaTiO3 for Si photonics
Alexander A. Demkov
University of Texas
Austin, USA
PoliFAB (Building 30)
Via Colombo, 81 Milano
May 18th, 2023
10.30
Contacts:
Andrea Melloni
Research Line:
Applied electromagnetics
University of Texas
Austin, USA
PoliFAB (Building 30)
Via Colombo, 81 Milano
May 18th, 2023
10.30
Contacts:
Andrea Melloni
Research Line:
Applied electromagnetics
Sommario
On May 18th, 2023 at 10.30 Alexander A. Demkov, Professor of Physics at The University of Texas, Austin - USA, will give a seminar on "Large-area Si-integrated BaTiO3 for Si photonics" in PoliFAB (Building 30).
The von Neumann computer architecture is experiencing difficulties with both scaling and power consumption requirements, and as a result, new computing paradigms are being actively explored. Even more revolutionary would be a complete or partial switch from electrons to photons. Infrared silicon photonics is one possible avenue for realizing such an alternative computing paradigm. This technology will ultimately require integration of active and passive photonic elements on a single chip. One key photonic element is an optical modulator. I will discuss the recent progress in integrating ferroelectric LiNbO3 and BaTiO3 with silicon photonics for the purpose of fabricating electro-optic modulators exploiting the linear electro-optic effect. I will focus on the fabrication of thick films of ferroelectric perovskite BaTiO3 capable of providing a robust electro-optic (EO) response via the Pockels effect. The EO response being a tensor property, is very sensitive to crystal microstructure. I will discuss the relation of the film microstructure to its EO properties.
EO measurements performed in free space as well as using Si waveguides, deposited atop the film, correlate well with the microstructural analysis and demonstrate the potential of Si-integrated BaTiO3 for silicon photonics.
The von Neumann computer architecture is experiencing difficulties with both scaling and power consumption requirements, and as a result, new computing paradigms are being actively explored. Even more revolutionary would be a complete or partial switch from electrons to photons. Infrared silicon photonics is one possible avenue for realizing such an alternative computing paradigm. This technology will ultimately require integration of active and passive photonic elements on a single chip. One key photonic element is an optical modulator. I will discuss the recent progress in integrating ferroelectric LiNbO3 and BaTiO3 with silicon photonics for the purpose of fabricating electro-optic modulators exploiting the linear electro-optic effect. I will focus on the fabrication of thick films of ferroelectric perovskite BaTiO3 capable of providing a robust electro-optic (EO) response via the Pockels effect. The EO response being a tensor property, is very sensitive to crystal microstructure. I will discuss the relation of the film microstructure to its EO properties.
EO measurements performed in free space as well as using Si waveguides, deposited atop the film, correlate well with the microstructural analysis and demonstrate the potential of Si-integrated BaTiO3 for silicon photonics.
