Silicon Carbide Integrated Circuits

An economic analysis on fabrication and commercialization of Silicon Carbide Integrated Circuits

Davide Leoni
DEI PhD Student

DEI - Edificio 24 Aula Alfa
11 novembre 2011
Ore 18.00

Abstract

Silicon Carbide (SiC) is a semiconductor which possesses many remarkable features, the most important being much higher breakdown voltage (2-3 MV/cm) and operational temperature (> 300 ░C) compared to silicon. These properties make SiC an ideal material to manufacture ICs which has to operate in harsh environment, however, as of today, its use has been very limited due to excessive cost. This research analyzes the feasibility, from an economic point of view, to use an SiC ASIC to control an electromechanical actuator, placed inside a low voltage circuit breaker. The comparison between the cost of the current solution (discrete components in Si) and the innovative solution (ASIC in SiC), was carried out parametrically, considering different values of chip area, and different values of defect density for the SiC wafer. The economic convenience of launch into the market has then been evaluated, proposing three different scenarios (probable, optimistic and pessimistic) of semiconductor price reduction, based on trends registered in the last years.

Area di ricerca:
Sensori e strumentazione