STDP in oxide-based resistive switching nanodevices

Spike-timing dependent plasticity (STDP) in oxide-based resistive switching nanodevices

Stefano Facchinetti
Politecnico di Milano

room Beta - via Golgi, 40
July 22nd, 2011
at 10.00 a.m.


Resistive-switching random access memory (RRAM) is a promising technology for the development of neuromorphic networks. The memristive behavior of these devices is exploited to realize the programmable connections (synapses) between CMOS blocks (neurons). A learning mechanism typical of mammalian brains, the Spike Timing Dependent Plasticity (STDP), has been already implemented with memristive devices in a cross-bar arrangement. In this architecture, Long Term Potentiation (LTP) and Long Term Depression (LTD) are achieved by controlling the voltage applied to the memristive cell.

The aim of this work is the study of a new STDP implementation, based on the control of the current flowing in the memristive cell by the use of a one transistor - one resistor (1T1R) cell structure. The design and realization of a complete dedicated setup has demonstrated the feasibility of using 1T1R structure for neuromorphic applications.

Daniele Ielmini

Research areas:
Microelectronics and Emerging Technologies