Resistive Switching in organic based memory cells

Resistive Switching in organic based memory cells
Angelo Rottigni
PhD Student

DEI - Ed. 22, Sala Riunioni (III piano)
25 novembre 2010
Ore 11.00

Abstract:

Organic materials are becoming an interesting base for electronic devices since they can be processed in large areas at low cost and because their electronical properties are retained down to the molecular sizes. One of the interesting properties of thin film of some organic materials is that when they are interposed between two electrodes, they show a resistive switching behavior: it is possible to change their resistance between two stable values by applying a proper voltage, and the value of the resistance can be read applying a smaller voltage. This phenomenon can be used to build memory devices, but it is necessary to understand the mechanism that causes it to be able to optimize reliability, retention time, ratio between resistance in the two states, time needed to switch and maximum number of switching pulses. In this research, the impact of the molecular tailoring, of device production protocol and of the metal used for electrodes will be evaluated experimentally, and models for the switching mechanisms will be proposed.

Contatti:
Angelo Rottigni

Area di ricerca:
Sensori e strumentazione